1 CAS120M12BM2 1.2kv, 13 m? all-silicon carbide half-bridge module c2m mosfet and z-rec ? diode dat asheet : CAS120M12BM2,rev. - features ? ultra low loss ? high-frequency operation ? zero reverse recovery current from diode ? zero turn-off tail current from mosfet ? normally-off, fail-safe device operation ? ease of paralleling ? copper baseplate and aluminum nitride insulator system benefts ? enables compact and lightweight systems ? high effciency operation ? mitigates over-voltage protection ? reduced thermal requirements ? reduced system cost applications ? induction heating ? solar and wind inverters ? dc/dc converters ? line regen drives ? battery chargers package 62mm x 106mm x 30mm maximum ratings (t c = 25?c unless otherwise specifed) symbol parameter value unit test conditions notes v dsmax drain - source voltage 1.2 kv v gsmax gate - source voltage -10/+25 v absolute maximum values v gsop gate - source voltage -5/20 v recommended operational values i d continuous mosfet drain current 193 a v gs = 20 v, t c = 25 ?c fig. 26 138 v gs = 20 v, t c = 90 ?c i d(pulse) pulsed drain current 480 a pulse width tp limited by t j(max) i f continuous diode forward current 305 a v gs = -5 v, t c = 25 ?c 195 v gs = -5 v, t c = 90 ?c t jmax junction temperature -40 to +150 ?c t c ,t stg case and storage temperature range -40 to +125 ?c v isol case isolation voltage 5 kv ac, 50 hz , 1 min l stray stray inductance 15 nh measured between terminals 2 and 3 p d power dissipation 925 w t c = 25 ? c, t j = 150 ?c fig. 25 part number package marking CAS120M12BM2 half-bridge module CAS120M12BM2 v ds 1.2 kv e sw, total @ 120a, 150 ?c 2.1 mj r ds(o n) 13 m? subject to change without notice. www.cree.com
2 electrical characteristics (t c = 25?c unless otherwise specifed) symbol parameter min. typ. max. unit test conditions note v (br)dss drain - source breakdown voltage 1.2 kv v gs, = 0 v, i d = 300 a v gs(th) gate threshold voltage 1.8 2.6 v v ds = 10 v , i d = 6 ma fig. 7 i dss zero gate voltage drain current 80 300 a v ds = 1.2 kv, v gs = 0v 400 1500 v ds = 1.2 kv,v gs = 0v, t j = 150 ? c i gss gate-source leakage current 1 100 na v gs = 20 v, v ds = 0v r ds(on) on state resistance 13 16 m? v gs = 20 v, i ds = 120 a fig. 4, 5, 6 23 30 v gs = 20 v, i ds = 120 a , t j = 150 ? c g fs transconductance 53.8 s v ds = 20 v , i ds = 120 a fig. 8 48.5 v ds = 20 v , i d = 120 a, t j = 150 ? c c iss input capacitance 6.3 nf v ds = 1 kv, f = 200 khz, v ac = 25 mv fig. 16, 17 c oss output capacitance 0.88 c rss reverse transfer capacitance 0.037 e on turn-on switching energy 1.7 mj v dd = 600 v, v gs = -5v/+20v i d = 120 a, r g(ext) = 2.5 load = 142 h, t j = 150 ? c note: iec 60747-8-4 defnitions fig. 22 e off turn-off switching energy 0.4 mj r g (int) internal gate resistance 1.8 ? f = 200 khz, v ac = 25 mv q gs gate-source charge 97 nc v dd = 800 v, v gs = -5v/+20v, i d = 120 a, per jedec24 pg 27 fig. 15 q gd gate-drain charge 118 q g total gate charge 378 t d(on) turn-on delay time 38 ns v dd = 600v, v gs = -5/+20v, i d = 120 a, r g(ext) = 2.5 , timing relative to v ds note: iec 60747-8-4, pg 83 inductive load fig. 24 t r rise time 34 ns t d(off) turn-off delay time 70 ns t f fall time 22 ns v sd diode forward voltage 1.5 1.8 v i f = 120 a, v gs = 0 fig. 10 1.9 2.4 i f = 120 a, t j = 150 ? c, v gs = 0 fig. 11 q c total capacitive charge 1.1 c i sd = 120a, v ds = 600 v, t j = 25c, di sd /dt = 3 ka/s, v gs = -5 v additional module data symbol parameter max. unit test condtion w weight 290 g m mounting torque 5 nm to heatsink and terminals clearance distance 9 mm terminal to terminal creepage distance 30 mm terminal to terminal 40 mm terminal to baseplate thermal characteristics symbol parameter min. typ. max. unit test conditions note r thjcm thermal resistance juction-to-case for mosfet 0.125 0.135 ?c/w fig. 27 r thjcd thermal resistance juction-to-case for diode 0.108 0.115 fig. 28 CAS120M12BM2,rev. -
3 typical performance 0 60 120 180 240 300 360 0 1 2 3 4 5 6 7 8 9 10 drain - source current, i ds (a) drain - source voltage, v ds (v) conditions: t j = - 40 c tp < 200 s v gs = 20 v v gs = 10 v v gs = 18 v v gs = 16 v v gs = 14 v v gs = 12 v 0 60 120 180 240 300 360 0 1 2 3 4 5 6 7 8 9 10 drain - source current, i ds (a) drain - source voltage, v ds (v) conditions: t j = 25 c tp < 200 s v gs = 20 v v gs = 10 v v gs = 18 v v gs = 16 v v gs = 14 v v gs = 12 v figure 2. output characteristics t j = 25 ? c figure 1. output characteristics t j = -40 ? c 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 on resistance, r ds on (p.u.) junction temperature, t j ( c) conditions: i ds = 120 a v gs = 20 v t p < 200 s 0 60 120 180 240 300 360 0 1 2 3 4 5 6 7 8 9 10 drain - source current, i ds (a) drain - source voltage, v ds (v) conditions: t j = 150 c tp < 200 s v gs = 20 v v gs = 10 v v gs = 18 v v gs = 16 v v gs = 14 v v gs = 12 v figure 6. on-resistance vs. temperature for various gate-source voltage figure 4. normalized on-resistance vs. temperature 0 5 10 15 20 25 30 35 0 50 100 150 200 250 300 350 on resistance, r ds on (mohms) drain - source current, i ds (a) conditions: v gs = 20 v t p < 200 s t j = 150 c t j = - 55 c t j = 25 c 0 5 10 15 20 25 30 - 50 - 25 0 25 50 75 100 125 150 on resistance, r ds on (mohms) junction temperature, t j ( c) conditions: i ds = 120 a t p < 200 s v gs = 20 v v gs = 18 v v gs = 16 v v gs = 14 v figure 5. on-resistance vs. drain current for various temperatures figure 3. output characteristics t j = 150 ? c CAS120M12BM2,rev. -
4 - 360 - 300 - 240 - 180 - 120 - 60 0 - 4.0 - 3.5 - 3.0 - 2.5 - 2.0 - 1.5 - 1.0 - 0.5 0.0 drain - source current, i ds (a) drain - source voltage v ds (v) conditions: t j = - 40 c t p < 200 s v gs = - 2 v v gs = - 5 v v gs = 0 v typical performance 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 - 50 - 25 0 25 50 75 100 125 150 threshold voltage, v th (v) junction temperature t j ( c) conditons v ds = 10 v i ds = 6 ma 0 40 80 120 160 200 240 0 2 4 6 8 10 12 14 drain - source current, i ds (a) gate - source voltage, v gs (v) conditions: v ds = 20 v tp < 200 s t j = 150 c t j = - 40 c t j = 25 c - 360 - 300 - 240 - 180 - 120 - 60 0 - 4.0 - 3.5 - 3.0 - 2.5 - 2.0 - 1.5 - 1.0 - 0.5 0.0 drain - source current, i ds (a) drain - source voltage v ds (v) conditions: t j = 25 c t p < 200 s v gs = - 2 v v gs = - 5 v v gs = 0 v figure 8. transfer characteristic for various junction temperatures figure 10. diode characteristic at 25 ? c figure 9. diode characteristic at -40 ? c - 360 - 300 - 240 - 180 - 120 - 60 0 - 4.0 - 3.5 - 3.0 - 2.5 - 2.0 - 1.5 - 1.0 - 0.5 0.0 drain - source current, i ds (a) drain - source voltage v ds (v) conditions: t j = 150 c t p < 200 s v gs = - 2 v v gs = - 5 v v gs = 0 v - 360 - 300 - 240 - 180 - 120 - 60 0 - 3.0 - 2.5 - 2.0 - 1.5 - 1.0 - 0.5 0.0 drain - source current, i ds (a) drain - source voltage v ds (v) conditions: t j = 25 c t p = 200 s conditions: t j = - 40 c t p = 200 s v gs = 10 v v gs = 5 v v gs = 20 v v gs = 15 v v gs = 0 v figure 12. 3 rd quadrant characteristic at -40 ? c figure 7. threshold voltage vs. temperature figure 11. diode characteristic at 150 ? c CAS120M12BM2,rev. -
5 - 5 0 5 10 15 20 25 0 50 100 150 200 250 300 350 400 gate - source voltage, v gs (v) gate charge, q g (nc) conditions: i ds = 120 a i gs = 100 ma v ds = 800 v t j = 25 c typical performance - 360 - 300 - 240 - 180 - 120 - 60 0 - 3.0 - 2.5 - 2.0 - 1.5 - 1.0 - 0.5 0.0 drain - source current, i ds (a) drain - source voltage v ds (v) conditions: t j = 25 c t p = 200 s conditions: t j = 25 c t p = 200 s v gs = 10 v v gs = 5 v v gs = 20 v v gs = 15 v v gs = 0 v - 360 - 300 - 240 - 180 - 120 - 60 0 - 3.5 - 3.0 - 2.5 - 2.0 - 1.5 - 1.0 - 0.5 0.0 drain - source current, i ds (a) drain - source voltage v ds (v) conditions: t j = 25 c t p = 200 s conditions: t j = 150 c t p = 200 s v gs = 10 v v gs = 5 v v gs = 20 v v gs = 15 v v gs = 0 v figure 14. 3 rd quadrant characteristic at 150 ? c 1 10 100 1000 10000 100000 0 50 100 150 200 capacitance (pf) drain - source voltage, v ds (v) c iss c oss conditions: t j = 25 c v ac = 25 mv f = 200 khz c rss figure 13. 3 rd quadrant characteristic at 25 ? c 1 10 100 1000 10000 100000 0 200 400 600 800 1000 capacitance (pf) drain - source voltage, v ds (v) c iss c oss conditions: t j = 25 c v ac = 25 mv f = 200 khz c rss 0 100 200 300 400 500 600 0 200 400 600 800 1000 1200 stored energy, e oss (j) drain to source voltage, v ds (v) figure 18. output capacitor stored energy figure 15. gate charge characteristics figure 16. capacitances vs. drain-source voltage (0 - 200 v) figure 17. capacitances vs. drain-source voltage (0 - 1 kv) CAS120M12BM2,rev. -
6 typical performance 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 40 80 120 160 200 240 switching loss (mj) drain to source current, i ds (a) e off e on e total conditions: t j = 25 c v dd = 600 v r g(ext) = 2.5 ? v gs = - 5/+20 v l = 142 h figure 19. inductive switching energy vs. drain current for v ds = 600v, r g = 2.5 ? figure 20. inductive switching energy vs. drain current for v ds = 800 v, r g = 2.5 ? 0 2 4 6 8 10 12 14 16 18 0 5 10 15 20 25 30 35 40 45 switching loss (mj) external gate resistor r g (ext) (ohms) e off e on e total conditions: t j = 25 c v dd = 600 v i ds =120 a v gs = - 5/+20 v l = 142 h 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 0 40 80 120 160 200 240 switching loss (mj) drain to source current, i ds (a) e off e on e total conditions: t j = 25 c v dd = 800 v r g(ext) = 2.5 ? v gs = - 5/+20 v l = 142 h 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 25 50 75 100 125 150 175 switching loss (mj) junction temperature, t j ( c) e off e on e total conditions: v dd = 600 v r g(ext) = 2.5 ? i ds =120 a v gs = - 5/+20 v l = 142 h figure 22. inductive switching energy vs. temperature figure 21. inductive switching energy vs. r g(ext) 0 50 100 150 200 250 300 350 400 450 500 0 5 10 15 20 25 30 35 40 time (ns) external gate resistor, r g(ext) (ohms) conditions: t j = 25 c v dd = 600 v i ds = 120 a v gs = - 5/+20 v t d (off) t d (on) t f t r figure 23. timing vs. r g(ext) figure 24. resistive switching time description CAS120M12BM2,rev. -
7 typical performance 100e - 6 1e - 3 10e - 3 100e - 3 1e - 6 10e - 6 100e - 6 1e - 3 10e - 3 100e - 3 1 10 junction to case impedance, z thjc ( o c/w) time, t p (s) 0.5 0.3 0.1 0.05 0.02 0.01 singlepulse 0 50 100 150 200 250 - 40 - 20 0 20 40 60 80 100 120 140 drain - source continous current, i ds (dc) (a) case temperature, t c ( c) conditions: t j 150 c 100e - 6 1e - 3 10e - 3 100e - 3 1e - 6 10e - 6 100e - 6 1e - 3 10e - 3 100e - 3 1 10 junction to case impedance, z thjc ( o c/w) time, t p (s) 0.5 0.3 0.1 0.05 0.02 0.01 singlepulse figure 27. mosfet junction to case thermal impedance figure 28. diode junction to case thermal impedance 0 100 200 300 400 500 600 700 800 900 1000 - 40 - 20 0 20 40 60 80 100 120 140 maximum dissipated power, p tot (w) case temperature, t c ( c) conditions: t j 150 c figure 25. maximum power dissipation (mosfet) derating vs. case temperature figure 26. continous drain current (mosfet) derating vs case temperature figure 29. maximum power dissipation (mosfet) derat - ing vs. case temperature 0.01 0.10 1.00 10.00 100.00 1000.00 0.1 1 10 100 1000 drain - source current, i ds (a) drain - source voltage, v ds (v) 100 s 1 ms 10 s conditions: t c = 25 c d = 0, parameter: t p 100 ms limited by r ds on CAS120M12BM2,rev. -
8 schematic package dimensions (mm) CAS120M12BM2 CAS120M12BM2,rev. -
module application note: the sic mosfet module switches at speeds beyond what is customarily associated with igbt based modules. therefore, special precautions are required to realize the best performance. the interconnection between the gate driver and module housing needs to be as short as possible. this will afford the best switching time and avoid the potential for device oscillation. also, great care is required to insure minimum inductance between the module and link capacitors to avoid excessive v ds overshoots. please refer to application note: design considerations when using cree sic modules part 1 and part 2. [cpwr-an12, cpwr-an13] 9 9 CAS120M12BM2 rev. - copyright ? 2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo, and zero recovery are registered trademarks of cree, inc. cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5451 www.cree.com/power ? rohs compliance the levels of rohs restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with eu directive 2011/65/ec (rohs2), as implemented january 2, 2013. rohs declarations for this product can be obtained from your cree representative or from the product documentation sections of www.cree.com. ? reach compliance reach substances of high concern (svhcs) information is available for this product. since the european chemi - cal agency (echa) has published notice of their intent to frequently revise the svhc listing for the foreseeable future,please contact a cree representative to insure you get the most up-to-date reach svhc declaration. reach banned substance information (reach article 67) is also available upon request. ? this product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defbrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffc control systems. notes
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